TPW1R104PB,L1XHQ
Toshiba Semiconductor and Storage
Deutsch
Artikelnummer: | TPW1R104PB,L1XHQ |
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Hersteller / Marke: | TAEC Product (Toshiba Electronic Devices and Storage Corporation) |
Teil der Beschreibung.: | MOSFET N-CH 40V 120A 8DSOP |
Datenblätte: |
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RoHs Status: | Lead free / RoHs compliant |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $2.26 |
10+ | $2.031 |
100+ | $1.6326 |
500+ | $1.3414 |
1000+ | $1.1114 |
2000+ | $1.0348 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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VGS (th) (Max) @ Id | 3V @ 500µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | 8-DSOP Advance |
Serie | U-MOSIX-H |
Rds On (Max) @ Id, Vgs | 1.14mOhm @ 60A, 10V |
Verlustleistung (max) | 960mW (Ta), 132W (Tc) |
Verpackung / Gehäuse | 8-PowerVDFN |
Paket | Tape & Reel (TR) |
Betriebstemperatur | 175°C |
Produkteigenschaften | Eigenschaften |
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Befestigungsart | Surface Mount |
Eingabekapazität (Ciss) (Max) @ Vds | 4560 pF @ 10 V |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 6V, 10V |
Drain-Source-Spannung (Vdss) | 40 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 120A (Ta) |
Grundproduktnummer | TPW1R104 |
TOSHIBA 2016+RoHS
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![]() TPW1R104PB,L1XHQToshiba Semiconductor and Storage |
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